Equipment: RF Micro Devices Launches Next-Generation GaAs HBT Pre-Driver Power Amrlifiers for Cellular Base Stations

29.03.2005, "MForum.ru"

RF Micro Devices, Inc. today announced two new gallium arsenide heterojunction bipolar transistor (GaAs HBT) pre-driver power amplifiers (PAs) for cellular base station applications. The half-watt RF3807 and two-watt RF3809 single-stage devices operate across CDMA, GSM, DCS, PCS and UMTS frequencies and lower the total cost of implementation for manufacturers of cellular base stations. The RF3807 and RF3809 feature high linearity (>+42 dBm, UMTS), high power-added efficiency (>40%, P1dB) and broadband (450-2200 MHz) performance, providing functionality for a variety of wireless applications.

RF3807 and RF3809 single-stage devices

Jeff Shealy, vice president, infrastructure product line, RF Micro Devices, said, “The broadband performance of our new highly linear amplifiers enable infrastructure manufacturers to accommodate the demanding capacity requirements of next-generation, feature-rich cellular phones. Also, through our manufacturing scale and design expertise in GaAs HBT, we’re able to provide our customers a more robust infrastructure-qualified amplifier that leverages our low-cost manufacturing advantage.”

Operating in the UMTS frequency band, the RF3807 driver amplifier provides +28.5 dBm output power (OP1dB), high power efficiency (40% at OP1dB), high linearity (+42 dBm OIP3) and gain (14.5 dB) under linear operation. The RF3807 obtains -60 dBc Adjacent Channel Power (ACPR) at power output (Pout) of +17 dBm (test condition: ACPR measured at 5 MHz offset, WCDMA modulation, 64 channel base station forward link).

Operating in the UMTS frequency band, the RF3809 driver amplifier provides +33.5 dBm output power (OP1dB), high power efficiency (43% at OP1dB), high linearity (+43 dBm OIP3) and gain (10.5 dB) under linear operation. The RF3809 obtains -60 dBc ACPR at Pout of +20 dBm (test condition: ACPR measured at 5 MHz offset, WCDMA modulation, 64 channel base station forward link).

The RF3807 and RF3809 complement RFMD’s GaAs HBT pre-driver and driver amplifier product portfolio, which offers customers an array of design options ranging from +28 dBm to +37 dBm output power (P1dB). The plastic-packaged RF3807 and RF3809 GaAs HBT pre-driver power amplifiers deliver a low-cost multiband (450-2200 MHz) option to customers with power output requirements that are less than two-watts (P1dB). For customers seeking driver amplifiers with power output requirements that are greater than two-watts (P1dB), RFMD offers the RF3800 series (RF3800, RF3802, RF3805), assembled in Aluminum Nitride (AlN) packages.

The RF3807 and RF3809 are currently being sampled to customers. The pre-driver amplifiers are priced at $4.07 in quantities of 10,000 units and will be available from RFMD in volume production during the second quarter of calendar year 2005.

Equipment: RF Micro Devices Launches Next-Generation GaAs HBT Pre-Driver Power Amrlifiers for Cellular Base Stations

Equipment: RF Micro Devices Launches Next-Generation GaAs HBT Pre-Driver Power Amrlifiers for Cellular Base Stations

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